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DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ34 NPN 4 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The device also features high output voltage capabilities. PINNING PIN 1 2 3 4 DESCRIPTION Code: BFQ34/01 collector emitter base emitter
2 Top view
lfpage
BFQ34
4 1 3
MBK187
Fig.1 SOT122A.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Vo PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation transition frequency output voltage up to Tc = 160 C IC = 120 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C; dim = -60 dB f(p+q-r) = 793.25 MHz IC = 120 mA; VCE = 15 V; RL = 75 ; f = 800 MHz; Tamb = 25 C IC = 120 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. open base CONDITIONS open emitter TYP. - - - - 1.2 IC = 150 mA; VCE = 15 V; f = 500 MHz 4 MAX. 25 18 150 2.7 - - UNIT V V mA W GHz V
PL1 ITO
output power at 1 dB gain compression third order intercept point
26 45
- -
dBm dBm
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Tc = 160 C open emitter open base open collector CONDITIONS MIN. - - - - - -65 -
BFQ34
MAX. 25 18 2 150 2.7 150 200
UNIT V V V mA W C C
THERMAL RESISTANCE SYMBOL Rth j-c PARAMETER thermal resistance from junction to case THERMAL RESISTANCE 15 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT PARAMETER collector cut-off current DC current gain transition frequency CONDITIONS IE = 0; VCB = 15 V IC = 75 mA; VCE = 15 V IC = 150 mA; VCE = 15 V IC = 150 mA; VCE = 15 V; f = 500 MHz Cc Ce Cre Cc-s F GUM Vo PL1 ITO Notes 1. Measured with grounded emitter and base. 2. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 ------------------------------------------------------------- dB. G UM = 10 log 2 2 1 - S 11 1 - S 22 3. dim = -60 dB (DIN 45004B, par. 6.3.: 3-tone); IC = 120 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C; Vp = VO at dim = -60 dB; fp = 795.25 MHz; Vq = VO -6 dB; fq = 803.25 MHz; Vr = VO -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. 4. IC = 120 mA; VCE = 15 V; Tamb = 25 C; RL = 75 ; measured at f = 800 MHz. 5. IC = 120 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C; Pp = ITO - 6 dB; fp = 800 MHz; Pq = ITO - 6 dB; fq = 801 MHz; measured at f(2q-p) = 802 MHz and at f(2p-q) = 799 MHz.
2
BFQ34
MIN. TYP. MAX. UNIT - 25 25 3.5 - - - - - - - - - - 70 70 3.5 4 2 11 1 0.8 8 16.3 1.2 26 45 100 - - - - 2.75 - 1.35 - - - - - - GHz GHz pF pF pF pF dB dB V dBm dBm A
IC = 75 mA; VCE = 15 V; f = 500 MHz 3
collector capacitance emitter capacitance feedback capacitance collector-stud capacitance noise figure (see Fig.2) maximum unilateral power gain (note 2) output voltage output power at 1 dB gain compression (see Fig.2) third order intercept point (see Fig.2)
IE = 0; VCB = 15 V; f = 1 MHz IC = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 15 V; f = 1 MHz; Tamb = 25 C note 1 IC = 120 mA; VCE = 15 V; f = 500 MHz; Tamb = 25 C IC = 120 mA; VCE = 15 V; f = 500 MHz; Tamb = 25 C Figs 2 and 7 and note 3 note 4 note 5
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
MBB361
handbook, halfpage
120
handbook, halfpage 2.2 nF
2.2 nF VCC
h FE
VBB L2 L1 200 10 nF 10 nF input 75 10 nF DUT 0.68 pF 24 24
80
output 75 40
0
MEA322
0
40
80
120
160 I C (mA)
f = 40 to 860 MHz; L1 = L2 = 5 H Ferroxcube coil.
VCE = 15 V; Tj = 25 C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
DC current gain as a function of collector current.
MEA320
handbook, halfpage
6
handbook, halfpage
8
MBB357
Cc (pF)
fT (GHz) 6 4
4
2 2
0 0 10 VCB (V) 20
0 0 40 80 120 I C (mA) 160
IE = 0; f = 1 MHz; Tj = 25 C.
VCE = 15 V; f = 500 MHz; Tj = 25 C.
Fig.4
Collector capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
MEA319
MEA321
handbook, halfpage
40
handbook, halfpage
20
gain (dB) 30
d im
(dB) 30
40 20 50 10 G UM Is12 I 0 10 -1
2
60
70 1 f (GHz) 10
50
100
I C (mA)
150
Ic = 120 mA; VCE = 15 V; Tamb = 25 C.
Vo = 1.2 V; VCE = 15 V; f(p+q-r) = 793.25 MHz
Fig.6 Gain as a function of frequency.
Fig.7
Intermodulation distortion as a function of collector current.
September 1995
6
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
handbook, full pagewidth
1 0.5 2
0.2 1200 MHz 1000 800 0 -j 0.2 0.5 500 1 2 5 10
5 10
+j
10
200 0.2 5
0.5 1 Ic = 120 mA; VCE = 15 V; Tamb= 25 C. Zo = 50 .
2
MEA315
Fig.8 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90 120 200 MHz 60
150 500 800 1000 1200 180
30
+
5 10 15 0
-
150
30
120 90 Ic = 120 mA; VCE = 15 V; Tamb= 25 C.
60
MEA317
Fig.9 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
handbook, full pagewidth
90 120 60
150 500 200 MHz 180
1200 1000 800
30
+
0.1 0.2 0
-
150
30
120 90 Ic = 120 mA; VCE = 15 V; Tamb= 25 C.
60
MEA318
Fig.10 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 0.2 0.5 800 500 200 MHz 5 1 2 5 10
10
1000 1200 0.2
0.5 1 Ic = 120 mA; VCE = 15 V; Tamb= 25 C. Zo = 50 .
2
MEA316
Fig.11 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BFQ34
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
September 1995
9
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFQ34
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
10

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